Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C
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چکیده
منابع مشابه
High-temperature superconductivity in atomic metallic hydrogen
Superconductivity in the recently proposed ground-state structures of atomic metallic hydrogen is calculated over the pressure range 500 GPa to 3.5 TPa. Near molecular dissociation, the electron-phonon coupling λ and renormalized Coulomb repulsion are similar to the molecular phase. A nearly continuous increase in the critical temperature Tc with pressure is thus predicted in this range, to ∼35...
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The Temperature and Opacity of Atomic Hydrogen in Spiral Galaxies
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Degradation of oxide-passivated boron-diffused silicon
Recombination in oxide-passivated boron-diffused silicon is found to increase severely at room temperature. The degradation reaction leads to a 45 fold increase in emitter recombination that saturates in 120 days, irrespective of whether the samples received a forming-gas anneal. The degradation was also examined for diffusions stored at 50, 75, and 100 °C. The results indicate that the degrada...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1991
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.104726